ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,312, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and TSMC CHINA COMPANY Ltd. (Shangha... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,313, issued on Nov. 3, was assigned to SUMITOMO ELECTRIC DEVICE INNOVATIONS INC. (Kanagawa, Japan). "Semiconductor device" was invented by Y... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,314, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Capacitor having dielectric comprising ruti... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,315, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Metal-insulator-metal capacitors"... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,316, issued on Nov. 3, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Capacitor of semiconductor device and distributed model circ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,317, issued on Nov. 3, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Capacitor device" was invented by Kazuo Enomoto (Matsumoto... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,318, issued on Nov. 3, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Silicon carbide semiconductor device and method of manufac... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,319, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Schottky barrier diode" was inven... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,320, issued on Nov. 3, was assigned to Silanna UV Technologies Pte Ltd (Singapore). "Semiconductor device" was invented by Petar Atanackovic... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,321, issued on Nov. 3, was assigned to STMicroelectronics (Rousset) SAS (Rousset, France). "Method for manufacturing a Schottky diode and co... Read More